IndiumV3, Main, Repository, bibRecord, 007851

High-power ps InGaAs diode laser MOPA system for efficient frequency doubling in periodically poled KTP

Identifieur interne : 007851 ( Main/Repository ); précédent : 007850; suivant : 007852

High-power ps InGaAs diode laser MOPA system for efficient frequency doubling in periodically poled KTP

Auteurs : RBID : Pascal:07-0306806

Descripteurs français

Pascal (Inist)
- Conversion fréquence optique, Génération harmonique 2, Courant injection, Laser semiconducteur, Diode laser, Laser IR, Laser pulsé, Optique non linéaire, Domaine temps ps, Durée impulsion, Matériau polé, Composé ternaire, Gallium arséniure, Indium arséniure, Composé quaternaire, Potassium composé, Titanyle composé, Phosphate, KTiOPO4, As Ga In, K O P Ti, InGaAs, Système MOPA, 4272B, 4255P, 4265K.
Wicri :
- concept : Phosphate.

English descriptors

KwdEn :
- Gallium arsenides, Indium arsenides, Infrared laser, Injection current, Laser diodes, Nonlinear optics, Optical frequency conversion, Phosphates, Poled material, Potassium compounds, Pulse width, Pulsed lasers, Quaternary compounds, Second harmonic generation, Semiconductor lasers, Ternary compounds, Titanyl compounds, ps range.

Abstract

This paper reports on a mode-locked InGaAs master oscillator power amplifier (MOPA) system that generates at 920 nm 14-ps-long pulses with a repetition rate of 4.3 GHz and an average power of 2.7 W. Single-pass frequency doubling in a periodically poled KTP crystal provides 550 mW of blue 460-nm radiation. The power of the blue output, which corresponds to a conversion efficiency of more than 20%, was optimized by a detailed investigation of the influence of various system parameters like injection current and repetition rate on pulse power, pulse duration, and spectral shape of the infrared laser pulses.

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Pascal:07-0306806

Le document en format XML

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<author><name sortKey="Fuchs, H" uniqKey="Fuchs H">H. Fuchs</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Department of Physics, Technical University of Kaiserslautem, Erwin-Schrödinger-Str. 46</s1>
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<country>Allemagne</country>
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<author><name sortKey="Tremont, M A" uniqKey="Tremont M">M. A. Tremont</name>
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<author><name sortKey="Casel, O" uniqKey="Casel O">O. Casel</name>
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<author><name sortKey="Woll, D" uniqKey="Woll D">D. Woll</name>
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<author><name sortKey="Ulm, T" uniqKey="Ulm T">T. Ulm</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Department of Physics, Technical University of Kaiserslautem, Erwin-Schrödinger-Str. 46</s1>
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<author><name sortKey="Lhuillier, J A" uniqKey="Lhuillier J">J. A. Lhuillier</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Department of Physics, Technical University of Kaiserslautem, Erwin-Schrödinger-Str. 46</s1>
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<author><name sortKey="Wallenstein, R" uniqKey="Wallenstein R">R. Wallenstein</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Department of Physics, Technical University of Kaiserslautem, Erwin-Schrödinger-Str. 46</s1>
<s2>67663 Kaiserslautern</s2>
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<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
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<sZ>6 aut.</sZ>
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<placeName><region type="land" nuts="2">Rhénanie-Palatinat</region>
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<publicationStmt><idno type="inist">07-0306806</idno>
<date when="2007">2007</date>
<idno type="stanalyst">PASCAL 07-0306806 INIST</idno>
<idno type="RBID">Pascal:07-0306806</idno>
<idno type="wicri:Area/Main/Corpus">007A86</idno>
<idno type="wicri:Area/Main/Repository">007851</idno>
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<seriesStmt><idno type="ISSN">0946-2171</idno>
<title level="j" type="abbreviated">Appl. phys., B Lasers opt. : (Print)</title>
<title level="j" type="main">Applied physics. B, Lasers and optics : (Print)</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Gallium arsenides</term>
<term>Indium arsenides</term>
<term>Infrared laser</term>
<term>Injection current</term>
<term>Laser diodes</term>
<term>Nonlinear optics</term>
<term>Optical frequency conversion</term>
<term>Phosphates</term>
<term>Poled material</term>
<term>Potassium compounds</term>
<term>Pulse width</term>
<term>Pulsed lasers</term>
<term>Quaternary compounds</term>
<term>Second harmonic generation</term>
<term>Semiconductor lasers</term>
<term>Ternary compounds</term>
<term>Titanyl compounds</term>
<term>ps range</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Conversion fréquence optique</term>
<term>Génération harmonique 2</term>
<term>Courant injection</term>
<term>Laser semiconducteur</term>
<term>Diode laser</term>
<term>Laser IR</term>
<term>Laser pulsé</term>
<term>Optique non linéaire</term>
<term>Domaine temps ps</term>
<term>Durée impulsion</term>
<term>Matériau polé</term>
<term>Composé ternaire</term>
<term>Gallium arséniure</term>
<term>Indium arséniure</term>
<term>Composé quaternaire</term>
<term>Potassium composé</term>
<term>Titanyle composé</term>
<term>Phosphate</term>
<term>KTiOPO4</term>
<term>As Ga In</term>
<term>K O P Ti</term>
<term>InGaAs</term>
<term>Système MOPA</term>
<term>4272B</term>
<term>4255P</term>
<term>4265K</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Phosphate</term>
</keywords>
</textClass>
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</teiHeader>
<front><div type="abstract" xml:lang="en">This paper reports on a mode-locked InGaAs master oscillator power amplifier (MOPA) system that generates at 920 nm 14-ps-long pulses with a repetition rate of 4.3 GHz and an average power of 2.7 W. Single-pass frequency doubling in a periodically poled KTP crystal provides 550 mW of blue 460-nm radiation. The power of the blue output, which corresponds to a conversion efficiency of more than 20%, was optimized by a detailed investigation of the influence of various system parameters like injection current and repetition rate on pulse power, pulse duration, and spectral shape of the infrared laser pulses.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0946-2171</s0>
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</fA05>
<fA06><s2>3</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>High-power ps InGaAs diode laser MOPA system for efficient frequency doubling in periodically poled KTP</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>FUCHS (H.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>TREMONT (M. A.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>CASEL (O.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>WOLL (D.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>ULM (T.)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>LHUILLIER (J. A.)</s1>
</fA11>
<fA11 i1="07" i2="1"><s1>WALLENSTEIN (R.)</s1>
</fA11>
<fA14 i1="01"><s1>Department of Physics, Technical University of Kaiserslautem, Erwin-Schrödinger-Str. 46</s1>
<s2>67663 Kaiserslautern</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
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<fA20><s1>425-430</s1>
</fA20>
<fA21><s1>2007</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>16194B</s2>
<s5>354000162295860070</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2007 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>13 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>07-0306806</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
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</fA64>
<fA66 i1="01"><s0>DEU</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>This paper reports on a mode-locked InGaAs master oscillator power amplifier (MOPA) system that generates at 920 nm 14-ps-long pulses with a repetition rate of 4.3 GHz and an average power of 2.7 W. Single-pass frequency doubling in a periodically poled KTP crystal provides 550 mW of blue 460-nm radiation. The power of the blue output, which corresponds to a conversion efficiency of more than 20%, was optimized by a detailed investigation of the influence of various system parameters like injection current and repetition rate on pulse power, pulse duration, and spectral shape of the infrared laser pulses.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B40B55P</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B40B65K</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B40B72B</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Conversion fréquence optique</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Optical frequency conversion</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Génération harmonique 2</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Second harmonic generation</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Courant injection</s0>
<s5>04</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Injection current</s0>
<s5>04</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Corriente inyección</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Laser semiconducteur</s0>
<s5>09</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Semiconductor lasers</s0>
<s5>09</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Diode laser</s0>
<s5>11</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Laser diodes</s0>
<s5>11</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Laser IR</s0>
<s5>12</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Infrared laser</s0>
<s5>12</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Laser IR</s0>
<s5>12</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Laser pulsé</s0>
<s5>13</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Pulsed lasers</s0>
<s5>13</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Optique non linéaire</s0>
<s5>17</s5>
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<s5>17</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Domaine temps ps</s0>
<s5>41</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>ps range</s0>
<s5>41</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Durée impulsion</s0>
<s5>42</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Pulse width</s0>
<s5>42</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Duración impulso</s0>
<s5>42</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Matériau polé</s0>
<s5>47</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Poled material</s0>
<s5>47</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Composé ternaire</s0>
<s5>50</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Ternary compounds</s0>
<s5>50</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Gallium arséniure</s0>
<s2>NK</s2>
<s5>51</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Gallium arsenides</s0>
<s2>NK</s2>
<s5>51</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Indium arséniure</s0>
<s2>NK</s2>
<s5>52</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Indium arsenides</s0>
<s2>NK</s2>
<s5>52</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Composé quaternaire</s0>
<s5>53</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Quaternary compounds</s0>
<s5>53</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Potassium composé</s0>
<s5>54</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Potassium compounds</s0>
<s5>54</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Titanyle composé</s0>
<s2>NK</s2>
<s5>55</s5>
</fC03>
<fC03 i1="17" i2="3" l="ENG"><s0>Titanyl compounds</s0>
<s2>NK</s2>
<s5>55</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>Phosphate</s0>
<s2>NA</s2>
<s5>56</s5>
</fC03>
<fC03 i1="18" i2="3" l="ENG"><s0>Phosphates</s0>
<s2>NA</s2>
<s5>56</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>KTiOPO4</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>As Ga In</s0>
<s4>INC</s4>
<s5>75</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>K O P Ti</s0>
<s4>INC</s4>
<s5>76</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>InGaAs</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>Système MOPA</s0>
<s4>INC</s4>
<s5>84</s5>
</fC03>
<fC03 i1="24" i2="3" l="FRE"><s0>4272B</s0>
<s4>INC</s4>
<s5>85</s5>
</fC03>
<fC03 i1="25" i2="3" l="FRE"><s0>4255P</s0>
<s4>INC</s4>
<s5>91</s5>
</fC03>
<fC03 i1="26" i2="3" l="FRE"><s0>4265K</s0>
<s4>INC</s4>
<s5>92</s5>
</fC03>
<fN21><s1>197</s1>
</fN21>
</pA>
</standard>
</inist>
</record>

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High-power ps InGaAs diode laser MOPA system for efficient frequency doubling in periodically poled KTP

High-power ps InGaAs diode laser MOPA system for efficient frequency doubling in periodically poled KTP

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